Resultats - Iñiguez Nicolau, Benjamin
Iñiguez Nicolau, Benjamin
| Tesis Doctorals Dirigides / Theses |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Títol: Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autor: Römer, Christian |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2024 |
| País: N/D |
| Títol: Compact Modeling of Variability in Organic Thin-Film Transistors |
| Autor: Nikolaou, Aristeidis |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2023 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Jakob Leise |
| Director: Alexander Kloes; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Jakob Pruefer |
| Director: Alexander Kloes; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Leise, Jakob Simon |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Prüfer, Jakob Markus |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact modeling of intrinsic capacitances in double-gate tunnel-fets |
| Autor: Atieh Farokhnejad |
| Director: Lime, François Gilbert Marie (Autor O Coautor) ; Benjamín Iñiguez Nicolau; François Lime; Alexander Gunther Klös |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Physical behaviour analysis and compact temperature-dependent modeling in Organic and IGZO TFTs |
| Autor: Cortes Ordoñez, Harold |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Compact Modeling of Intrinsic Capacitances in Double-Gate Tunnel-FETs |
| Autor: Farokhnejad, Atieh |
| Director: Iñiguez Nicolau, Benjamin; Lime, François Gilbert Marie |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Physical behaviour analysis and compact temperature-dependent modeling in organic and igzo tfts |
| Autor: Harold Cortés Ordóñez |
| Director: Benjamín Iñiguez Nicolau |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Publicacions en Revista / Papers |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Títol: Roadmap for Schottky barrier transistors |
| Autors: Bestelink E; Galderisi G; Golec P; Han Y; Iniguez B; Kloes A; Knoch J; Matsui H; Mikolajick T; Niang KM; Richstein B; Schwarz M; Sistani M; Sporea RA; Trommer J; Weber WM; Zhao QT; Calvet LE |
| Any: 2024 Clau: Review |
| Revista: Nano Futures |
| País: N/D |
| Títol: Roadmap for Schottky barrier transistors |
| Autors: Bestelink, Eva; Galderisi, Giulio; Golec, Patryk; Han, Yi; Iniguez, Benjamin; Kloes, Alexander; Knoch, Joachim; Matsui, Hiroyuki; Mikolajick, Thomas; Niang, Kham M; Richstein, Benjamin; Schwarz, Mike; Sistani, Masiar; Sporea, Radu A; Trommer, Jens; Weber, Walter M; Zhao, Qing-Tai; Calvet, Laurie E |
| Any: 2024 Clau: Review |
| Revista: Nano Futures |
| País: N/D |
| Títol: DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS |
| Autors: Broche, Anisleidy; Cerdeira, Antonio; Iniguez, Benjamin; Estrada, Magali |
| Any: 2024 Clau: Article |
| Revista: Facta Universitatis (Nis), Series: Electronics And Energetics |
| País: N/D |
| Títol: A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling |
| Autors: Lime, F; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors |
| Autors: Mounir, A; Iñiguez, B; Lime, F; Kloes, A; Knobloch, T; Grasser, T |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors |
| Autors: Mounir, Ahmed; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander; Knobloch, Theresia; Grasser, Tibor |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Gaussian DOS Charge-Based DC Compact Modeling of High-Speed Organic Transistors |
| Autors: Pashaki, Elahe Rastegar; Leise, Jakob; Iniguez, Benjamin; Kleemann, Hans; Kloes, Alexander; Darbandy, Ghader |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations |
| Autors: Roemer, C; Dersch, N; Darbandy, G; Schwarz, M; Han, Y; Zhao, QT; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors |
| Autors: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors |
| Autors: Kloes, Alexander; Leise, Jakob; Pruefer, Jakob; Nikolaou, Aristeidis; Iniguez, Benjamin; Gneiting, Thomas; Klauk, Hagen; Darbandy, Ghader |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Device Physics, Modeling and Simulation of Organic Electrochemical Transistors |
| Autors: Koch M; Tseng H; Weissbach A; Iniguez B; Leo K; Kloes A; Kleemann H; Darbandy G |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Device Physics, Modeling and Simulation of Organic Electrochemical Transistors |
| Autors: Koch, Malte; Tseng, Hsin; Weissbach, Anton; Iniguez, Benjamin; Leo, Karl; Kloes, Alexander; Kleemann, Hans; Darbandy, Ghader |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact I-V model for back-gated and double-gated TMD FETs |
| Autors: Mounir A; Iñiguez B; Lime F; Kloes A; Knobloch T; Grasser T |
| Any: 2023 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects |
| Autors: Nikolaou A; Leise J; Zschieschang U; Klauk H; Gneiting T; Darbandy G; Iñiguez B; Kloes A |
| Any: 2023 Clau: Article |
| Revista: Organic Electronics |
| País: N/D |
| Títol: Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures |
| Autors: Roemer C; Dersch N; Darbandy G; Schwarz M; Han Y; Zhao QT; Iñíguez B; Kloes A |
| Any: 2023 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: The Schottky barrier transistor in emerging electronic devices |
| Autors: Schwarz M; Vethaak TD; Derycke V; Francheteau A; Iniguez B; Kataria S; Kloes A; Lefloch F; Lemme M; Snyder JP; Weber WM; Calvet LE |
| Any: 2023 Clau: Review |
| Revista: Nanotechnology |
| País: N/D |
| Títol: Electrical Evolution of p-Type SnO<inline-formula> <tex-math notation=LaTeX>$_{\textit{x}}$</tex-math> </inline-formula> Film and Transistor Deposited by RF Magnetron Sputtering |
| Autors: Zhou, Yuyan; Song, Yu; Hong, Ruohao; Liu, Xingqiang; Zou, Xuming; Iniguez, Benjamin; Flandre, Denis; Li, Guoli; Liao, Lei |
| Any: 2023 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel |
| Autors: He, Penghui; Ding, Chunchun; Zou, Xuming; Li, Guoli; Hu, Wei; Ma, Chao; Flandre, Denis; Iniguez, Benjamin; Liao, Lei; Lan, Linfeng; Liu, Xingqiang; |
| Any: 2022 Clau: Article |
| Revista: Applied Physics Letters |
| País: N/D |
| Títol: Effect of Humidity on Properties of Aqueous-processed Tb-Doped Indium Oxide Thin-Film Transistors |
| Autors: He, Penghui; Hong, Ruohao; Li, Guoli; Zou, Xuming; Hu, Wei; Lan, Linfeng; Iniguez, Benjamin; Liao, Lei; Liu, Xingqiang |
| Any: 2022 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors |
| Autors: Pruefer, Jakob; Leise, Jakob; Borchert, James W; Klauk, Hagen; Darbandy, Ghader; Nikolaou, Aristeidis; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autors: Roemer, Christian; Darbandy, Ghader; Schwarz, Mike; Trommer, Jens; Heinzig, Andre; Mikolajick, Thomas; Weber, Walter M; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs |
| Autors: Yilmaz, Kerim; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform |
| Autors: Yilmaz, Kerim; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: The 2021 flexible and printed electronics roadmap |
| Autors: Bonnassieux Y; Brabec CJ; Cao Y; Carmichael TB; Chabinyc ML; Cheng KT; Cho G; Chung A; Cobb CL; Distler A; Egelhaaf HJ; Grau G; Guo X; Haghiashtiani G; Huang TC; Hussain MM; Iniguez B; Lee TM; Li L; Ma Y; Ma D; McAlpine MC; Ng TN; Österbacka R; Patel SN; Peng J; Peng H; Rivnay J; Shao L; Steingart D; Street RA; Subramanian V; Torsi L; Wu Y |
| Any: 2021 Clau: Review |
| Revista: Flexible And Printed Electronics |
| País: N/D |
| Títol: Analytical I-V and C-V models for symmetric double-gate AOSTFTs |
| Autors: Hernandez-Barrios, Y.; Estrada, M.; Pashkovich, A.; Muhea, W. E.; Iniguez, B.; Cerdeira, A.; |
| Any: 2021 Clau: Article |
| Revista: Semiconductor Science And Technology |
| País: N/D |
| Títol: Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM) |
| Autors: Hernandez-Barrios, Y; Gaspar-Angeles, J N; Estrada, M; Iniguez, B; Cerdeira, A |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC |
| Autors: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M |
| Any: 2021 Clau: Article |
| Revista: Journal Of Integrated Circuits And Systems |
| País: N/D |
| Títol: New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs |
| Autors: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance |
| Autors: Leise, J.; Pruefer, J.; Darbandy, G.; Nikolaou, A.; Giorgio, M.; Caironi, M.,;Zschieschang, U.;Klauk, H.; Kloes, A.;Iñiguez, B.; Borchert, J. W |
| Any: 2021 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance |
| Autors: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexander; Iniguez, Benjamin; Borchert, James W |
| Any: 2021 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors |
| Autors: Li, Guoli; Fan, Zizheng; Andre, Nicolas; Xu, Yongye; Xia, Ying; Iniguez, Benjamin; Liao, Lei; Flandre, Denis |
| Any: 2021 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances |
| Autors: Lime, Francois; Cerdeira, Antonio; Estrada, Magali; Pashkovich, Andrei; Iniguez, Benjamin |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Noise-Based Simulation Technique for Circuit-Variability Analysis |
| Autors: Nikolaou, Aristeidis; Leise, Jakob; Pruefer, Jakob; Zschieschang, Ute; Klauk, Hagen; Darbandy, Ghader; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors |
| Autors: Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: The flexible and printed electronics roadmap |
| Autors: Yvan Bonnassieux, Christoph J. Brabec, Yong Cao, Tricia Breen Carmichael, Michael L. Chabinyc, Kwang Ting Cheng, Gyoujin Cho, Anjung Chung, Corie L. Cobb, Andreas Distler, Hans Joachim Egelhaaf, Gerd Grau, Xiaojun Guo, Ghazaleh Haghiashtiani, Tsung Ching Huang, Muhammad M. Hussain, Benjamin Iniguez, Taik Min Lee, Ling Li, Yuguang Ma, Dongge Ma, Michael C. McAlpine, Tse Nga Ng, Ronald Österbacka*, Shrayesh N. Patel, Junbiao Peng, Huisheng Peng, Jonathan Rivnay, Leilai Shao, Daniel Steingart, Robert A. Street, Vivek Subramanian, Luisa Torsi, Yunyun Wu |
| Any: 2021 Clau: Article |
| Revista: Flexible And Printed Electronics |
| País: N/D |
| Títol: Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K |
| Autors: Cortes-Ordonez, Harold; Haddad, C; Mescot, Xavier; Romanjek, Krunoslav; Ghibaudo, Gerard; Estrada, Magali; Cerdeira, Antonio; Iniguez, Benjamin |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Analytical current-voltage model for double-gate a-IGZO TFTs with symmetric structure for above threshold |
| Autors: Hernandez-Barrios Y; Cerdeira A; Estrada M; Iniguez B |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Foreword Special Issue on Compact Modeling of Semiconductor Devices |
| Autors: Iniguez B; Chauhan YS; Mijalkovic S; Xia K; Goo JS; Pavanello M; Mierzwinski M; Grabinski W |
| Any: 2020 Clau: Editorial |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2020 Clau: Article |
| Revista: International Journal Of Reconfigurable And Embedded Systems |
| País: N/D |
| Títol: Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2020 Clau: Article |
| Revista: International Journal Of Reconfigurable And Embedded Systems |
| País: N/D |
| Títol: Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits including Nonquasistatic Effects |
| Autors: Leise J; Pruefer J; Nikolaou A; Darbandy G; Klauk H; Iniguez B; Kloes A |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs |
| Autors: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Seifaei, Masoud; Manoli, Yiannos; Klauk, Hagen; Zschieschang, Ute; Iniguez, Benjamin; Kloes, Alexander; |
| Any: 2020 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits including Nonquasistatic Effects |
| Autors: Leise, Jakob; Pruefer, Jakob; Nikolaou, Aristeidis; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors |
| Autors: Li G; Fan Z; Andre N; Xu Y; Xia Y; Iniguez B; Liao L; Flandre D |
| Any: 2020 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs |
| Autors: Muhea WE; Castillo GU; Ordonez HC; Gneiting T; Ghibaudo G; Iniguez B |
| Any: 2020 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated-Mobility Fluctuation |
| Autors: Nikolaou A; Darbandy G; Leise J; Pruefer J; Borchert JW; Geiger M; Klauk H; Iniguez B; Kloes A |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated-Mobility Fluctuation |
| Autors: Nikolaou, Aristeidis; Darbandy, Ghader; Leise, Jakob; Pruefer, Jakob; Borchert, James W; Geiger, Michael; Klauk, Hagen; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors |
| Autors: Pruefer J; Leise J; Darbandy G; Nikolaou A; Klauk H; Borchert JW; Iniguez B; Gneiting T; Kloes A |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors |
| Autors: Pruefer, Jakob; Leise, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Klauk, Hagen; Borchert, James W; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement |
| Autors: Yilmaz, Kerim; Darbandy, Ghader; Reimbold, Gilles; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Llibres / Books |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Capítols de Llibre / Book chapters |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Títol: Flexible and Printed Electronics, in More than Moore Devices and Integration for Semiconductors |
| Autors: IÑIGUEZ NICOLAU, BENJAMIN |
| Any: 2023 Clau: Book Chapters |
| Títol: Flexible and Printed Electronics |
| Autors: Iñiguez B |
| Any: 2023 Clau: Book Chapters |
| Altres Documents / Other documents |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Patents Sol.licitades / Patents |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Congressos / Conferences |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Autor/a: [189] L. E. Calvet, P. Coulson, B. Iniguez, and K. Romanjek |
| Títol: Unified Charge Control Model for MoS2 FET |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2022 |
| Autor/a: IÑIGUEZ NICOLAU, BENJAMIN |
| Títol: Numerical Exploration of Spiking Neuron Circuits in Organic Potft Technology |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2021 |
